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28.09 Kb c1027 transistorAbstract: transistor c1027 ® ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through, Voltage Transistor Threshold Voltage VTP P Body Factor Conduction Factor P Effective Channel Length, Voltage Transistor Threshold Voltage VTN N Body Factor N Conduction Factor Effective Channel Length, Daily Silver IMP Symbol COX CM1P CMM ­8 ­14 V V V 100x2.0µm 25 Process C1027 - Original. 22 Kb C1027Abstract: transistor c1027 bitemational i®? ]Rectifier INSULATED GATE BIPOLAR TRANSISTOR Features Short circuit rated - 1 0(js @ 125°C, V qe = 10V (5ps ® Vqe = 15V) Switching-loss rating includes all 'tail' losses Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve PD-9.1126A Short Circuit Rated UltraFast IGBT V c e s = 1200V VcE(sat)^3.5V @VGE = 15V, lc = 20A, Losses vs. Gate Resistance Fig.